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AO3416 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 6.5 A (VGS = 4.5V).
  • RDS(ON) ＜ 22mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 26mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 34mΩ (VGS = 1.8V) G D S +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pul.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel Enhancement MOSFET AO3416 (KO3416) MOSFET ■ Features ● VDS (V) = 20V ● ID = 6.5 A (VGS = 4.5V) ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) ● RDS(ON) ＜ 26mΩ (VGS = 2.5V) ● RDS(ON) ＜ 34mΩ (VGS = 1.8V) G D S +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t≤10sec Steady State Thermal Resistance.