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AO3419 - P-Channel Enhancement MOSFET

Key Features

  • VDS (V) = -20V ID = -3.5 A RDS(ON) 75m (VGS = -10V) RDS(ON) 95m (VGS = -4.5V) RDS(ON) 145m (VGS = -2.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain TA=25 Current.
  • 1 TA=70 -3.5 ID -2.8 Pulsed Drain Current.
  • 2 IDM -15 Power Dissipation.
  • 1 TA=25 TA=70 1.4 PD 0.9 Thermal Resistanc.

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SMD Type P-Channel Enhancement MOSFET AO3419 (KO3419) MOSFIECT Features VDS (V) = -20V ID = -3.5 A RDS(ON) 75m (VGS = -10V) RDS(ON) 95m (VGS = -4.5V) RDS(ON) 145m (VGS = -2.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain TA=25 Current *1 TA=70 -3.5 ID -2.8 Pulsed Drain Current *2 IDM -15 Power Dissipation *1 TA=25 TA=70 1.4 PD 0.9 Thermal Resistance.Junction-to-Ambient R JA 125 Thermal Resistance.Junction-to-Case R JC 60 Junction and Storage Temperature Range TJ, TSTG -55 to 150 *1The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz.