Kexin Electronics AO3419
P-Channel Enhancement MOSFET
| Part No. | AO3419 |
|---|---|
| Datasheet | AO3419 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
VDS (V) = -20V ID = -3.5 A RDS(ON) 75m (VGS = -10V) RDS(ON) 95m (VGS = -4.5V) RDS(ON) 145m (VGS = -2.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 G SABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain TA=25 Current *1 TA=70 -3.5 ID -2.8 Pulsed Drain Current *2 IDM -15 Power Dissipation *1 TA=25 TA=70 1.4 PD 0.9 Thermal Resistance.Junction-to-Ambient R JA 125 Thermal Resistance.Junction-to-Case R JC 60 Junction and Storage Temperature Range TJ, TSTG -55 to 150 *1The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Unit V V A W /W /W 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 1 SMD Type MOSFIECT AO3419 (KO3419)ELECTRICAL CHARACTERISTICS
Ta = 25...
