Datasheet Details
| Part number | AO3419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AO3419_AlphaOmegaSemiconductors.pdf |
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Overview: AO3419 20V P-Channel MOSFET General.
| Part number | AO3419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AO3419_AlphaOmegaSemiconductors.pdf |
|
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|
The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85mΩ < 102mΩ < 140mΩ HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±12 -3.5 -2.8 -17 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units ° C/W ° C/W ° C/W Rev 5: Nov 2011 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3419 | P-Channel Enhancement MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3410 | N-Channel MOSFET |
| AO3413 | 20V P-Channel MOSFET |
| AO3414 | 20V N-Channel MOSFET |
| AO3414L | N-Channel MOSFET |
| AO3415 | 20V P-Channel MOSFET |
| AO3415A | 20V P-Channel MOSFET |
| AO3416 | 20V N-Channel MOSFET |
| AO3416L | N-Channel MOSFET |
| AO3418 | 30V N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |