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AO3414 - N-Channel MOSFET

Key Features

  • VDS (V) = 20V +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 RDS(ON) RDS(ON) 63m 87m (VGS = 2.5V) (VGS = 1.8V) 0.55 RDS(ON) 50m (VGS = 4.5V) +0.1 1.3-0.1 ID = 4.2A (VGS=4.5V) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1 TA=25 TA=70 IDM PD RthJA RthJC TJ, TSTG Symbol VDS VGS.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V) = 20V +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 RDS(ON) RDS(ON) 63m 87m (VGS = 2.5V) (VGS = 1.8V) 0.55 RDS(ON) 50m (VGS = 4.5V) +0.1 1.3-0.1 ID = 4.2A (VGS=4.5V) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD RthJA RthJC TJ, TSTG Symbol VDS VGS ID Rating 20 8 4.2 3.2 15 1.4 0.9 125 80 -55 to 150 /W /W W A Unit V V Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Themal Resistance.Junction-to-Ambient *1 Themal Resistance.