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AO3418L - N-Channel MOSFET

Download the AO3418L datasheet PDF (AO3418 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO3418L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO3418-KERSEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AO3418L
Manufacturer KERSEMI
File Size 818.43 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3418L Datasheet

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Full PDF Text Transcription

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Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.
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