P1504EDG Datasheet - UNIKC

P1504EDG P-Channel MOSFET

P1504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -45A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM -45 -36 -150 Avalanche Current IAS -45 Avalanche Energy2 L=0.1mH EAS 102 Power Dissipation TC= .

P1504EDG-UNIKC.pdf