P1504EIS Datasheet - UNIKC

P1504EIS MOSFET

P1504EIS P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -38A TO-251(S) 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -38 -24 -150 Avalanche Current IAS -44 Avalanche Energy L = 0.1mH EAS 96.8 Power Dissipati.

P1504EIS-UNIKC.pdf