P1510ATG Datasheet - UNIKC

P1510ATG N-Channel MOSFET

P1510ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 15mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 64 45 200 Avalanche Current IAS 67 Avalanche Energy L = 0.1 mH EAS 224 Power Dissipation TC= 25 °C TC= 100°C PD 150 75 Operat.

P1510ATG Datasheet (434.55 KB)