P1703BDG Datasheet - UNIKC

P1703BDG N-Channel MOSFET

P1703BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 16mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 42 26 168 Avalanche Current IAS 27 Avalanche Energy L=0.1mH EAS 38 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Junction & Storage Temperature Ra.

P1703BDG Datasheet (472.32 KB)