P1810ATX - N-Channel MOSFET
P1810ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 18mΩ @VGS = 10V 63A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C ID 63 TC = 100 °C 40 IDM 180 Avalanche Current IAS 87 Avalanche Energy L = 0.1mH EAS 380 Power Dissipation TC = 25 °C PD 166 TC = 100 °C 66 Operating Junction & St.