P2206BT Datasheet - UNIKC

P2206BT N-Channel MOSFET

P2206BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 22.5mΩ @VGS = 10V 35A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 35 22 IDM 100 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 33.8 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5.

P2206BT Datasheet (762.41 KB)