P2503HEA Datasheet - UNIKC

P2503HEA MOSFET

P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 8A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8 6 60 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 14 Power Dissipation TA = 25 °C TA = 70 °C PD 2.2 1.4 Ope.

P2503HEA Datasheet (760.14 KB)