P2504EDG Datasheet - UNIKC

P2504EDG P-Channel MOSFET

P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 25.8mΩ @VGS = -10V ID -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -18 -13.5 -40 A Power Dissipation TC = 25 °C TC = 70 °C PD 42 W 27 Operating Juncti.

P2504EDG Datasheet (686.36 KB)