P2710AD Datasheet - UNIKC

P2710AD N-Channel Transistor

P2710AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 32mΩ @VGS = 10V ID 34A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 34 22 100 Avalanche Current IAS 50 Avalanche Energy L = 0.1mH EAS 125 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Jun.

P2710AD Datasheet (455.86 KB)