P3606BD Datasheet - UNIKC

P3606BD N-Channel Transistor

P3606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 36mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 22 14 45 Avalanche Current IAS 18 Avalanche Energy L=0.1mH EAS 16 Power Dissipation TC= 25 °C TC= 100°C PD 39 15.6 Junction & Sto.

P3606BD Datasheet (457.53 KB)