P3606HK - MOSFET
P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 15 ID 10 IDM 40 Continuous Drain Current TA = 25 °C TA = 70 °C 5 ID 4 Avalanche Current IAS 18.6 Avalanche Energy L = 0.1mH E
