P4006DV Datasheet - UNIKC

P4006DV P-Channel MOSFET

P4006DV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 40mΩ @VGS = -10V ID -5.9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -5.9 -4.7 -40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -40 80 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1..

P4006DV Datasheet (345.09 KB)