P5806NVG - N&P-Channel MOSFET
P5806NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 60V RDS(ON) 65mΩ @VGS = 10V -60V 120mΩ @VGS = -10V ID 4.5A -3.5A Channel N P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH.
LIMITS Drain-Source Voltage N 60 VDS P -60 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N 4.5 P -3.5 ID N 3.5 P -2.7 Pulsed Drain Current1 N 20 IDM P -20 Avalanche Current N 18.3 IAS P
