P6403FMG - P-Channel MOSFET
P6403FMG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 64mΩ @VGS = -4.5V ID -3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3 -2.3 -20 Avalanche Current IAS -20 Avalanche Energy L = 0.1 mH EAS 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.6
