P6803HVG Datasheet - UNIKC

P6803HVG Dual N-Channel MOSFET

P6803HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V ID 4.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 4.5 3.6 20 Power Dissipation TA = 25 °C TA= 70°C PD 2 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W.

P6803HVG Datasheet (478.65 KB)