P8008BDA Datasheet - UNIKC

P8008BDA N-Channel Transistor

P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 16 10 50 Avalanche Current IAS 15 Avalanche Energy L=0.1mH EAS 11 Power Dissipation TC = 25 °C TC = 100 °C PD 39 15 Junction &.

P8008BDA Datasheet (703.49 KB)