* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch S G www.VBsemi.com GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Cur
P8006EDG Datasheet (213.79 KB)
P8006EDG
VBsemi
213.79 KB
P-channel mosfet.
P8006EDG-VB P8006EDG-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - .
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