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P8006EDG P-Channel MOSFET

P8006EDG Description

P8006EDG-VB P8006EDG-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - .

P8006EDG Features

* TrenchFET® Power MOSFET

P8006EDG Applications

* Load Switch S G www. VBsemi. com GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Cu

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Datasheet Details

Part number
P8006EDG
Manufacturer
VBsemi
File Size
213.79 KB
Datasheet
P8006EDG-VBsemi.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET VBsemi
VBsemi P8006EDG-like datasheet