P9515BD Datasheet - UNIKC

P9515BD N-Channel MOSFET

P9515BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 90mΩ @VGS = 10V ID 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 18 11 37 Avalanche Current IAS 8 Avalanche Energy L = 1mH EAS 32 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22.7 Junctio.

P9515BD Datasheet (783.53 KB)