PA010BV Datasheet - UNIKC

PA010BV N-Channel MOSFET

PA010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 100mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3 2.2 15 Avalanche Current IAS 6 Avalanche Energy L = 1mH EAS 18 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.2 Junction & S.

PA010BV Datasheet (738.33 KB)