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PA410BD Datasheet - UNIKC

PA410BD N-Channel Transistor

PA410BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 140mΩ @VGS = 10V ID 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 10 7 30 Avalanche Current IAS 10 Avalanche Energy L =0.1mH EAS 5 Power Dissipation TC = 25 °C TC = 100 °C PD 35 14 Junction.

PA410BD Datasheet (704.55 KB)

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Datasheet Details

Part number:

PA410BD

Manufacturer:

UNIKC

File Size:

704.55 KB

Description:

N-channel transistor.

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PA410BD N-Channel Transistor UNIKC

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