PA406EM - P-Channel MOSFET
PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 140mΩ @VGS = -10V ID -2A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2 -1.5 -7 Power Dissipation TA = 25 °C TA = 70 °C PD 0.8 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 15.