PA504EV Datasheet - UNIKC

PA504EV P-Channel MOSFET

PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 150mΩ @VGS = -10V ID -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM -2.7 -2.1 -15 Avalanche Current IAS -10 Avalanche Energy L = 0.1mH EAS 5 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8.

PA504EV Datasheet (466.05 KB)