PD0903BEA Datasheet - UNIKC

PD0903BEA MOSFET

PD0903BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 48A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 48 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 30 13 Pulsed Drain Current1 TA = 70 °C IDM 10 130 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 45 TC = 25 °C 33 Power D.

PD0903BEA Datasheet (461.21 KB)