PD485BA Datasheet - UNIKC

PD485BA P-Channel MOSFET

PD485BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = 10V ID -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -43 -27 -100 Avalanche Current IAS -36 Avalanche Energy L =0.1mH EAS 64.8 Power Dissipation TC = 25 °C TC = 100 °C PD 50 32 .

PD485BA Datasheet (523.48 KB)