PK516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 7mΩ @VGS = 10V 51A PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 51 ID 32 IDM 120 Continuous Drain Current TA = 25 °C TA = 70 °C 14 ID 11 Avalanche Current IAS 27 Avalanche Energy L = 0.1m.
