PK552DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5.7mΩ @VGS = 4.5V ID 56A PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 56 ID 36 IDM 70 Continuous Drain Current TA = 25 °C TA = 70 °C 17 ID 14 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH .
