PK630HY MOSFET
PK630HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 4.9mΩ @VGS = 10V 30V 7.8mΩ @VGS = 10V ID CH. 64A Q2 40A Q1 PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 64 40 40 25 Pulsed Drain Current1 Q2 IDM Q1 150 90 Continuous Drain Curren.
