PK636BA MOSFET
PK636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 8mΩ @VGS = 10V ID 46A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 46 29 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 12 9.7 Avalanche Current IAS 20 Avalanche Energy L =0.1mH EAS 20 .
