PK6H2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 1.7mΩ @VGS = 10V ID 160A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM ID 160 101 350 A 39 31 Avalanche Current .
