PK6H6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.8mΩ @VGS = 10V ID 46A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM ID 46 29 100 A 16 13 Avalanche Current IA.
