PV606BA Datasheet - UNIKC

PV606BA MOSFET

PV606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ @VGS = 10V ID 7.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.7 6 28 Avalanche Current IAS 12.6 Avalanche Energy L =0.1mH EAS 7.9 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.1 Junction .

PV606BA Datasheet (440.79 KB)