PV650BA Datasheet - UNIKC

PV650BA MOSFET

PV650BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 15A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 15 12 60 Avalanche Current IAS 32 Avalanche Energy L =0.1mH EAS 51 Power Dissipation TA= 25 °C TA =70 °C PD 1.9 1.2 Junction & S.

PV650BA Datasheet (433.98 KB)