PW567EA Datasheet - UNIKC

PW567EA P-Channel Enhancement Mode MOSFET

PW567EA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 520mΩ @VGS = -4.5V ID -0.5A SOT-723 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C ID -0.5 TA = 70 °C -0.4 IDM -1 Power Dissipation TA = 25 °C PD TA= 70 °C 0.25 0.16 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A W °C.

PW567EA Datasheet (1.00 MB)