PW5D8EA - N-Channel Enhancement Mode MOSFET
PW5D8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 300mΩ @VGS = 4.5V ID 0.8A SOT-723 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±10 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM 0.8 0.62 2.4 Power Dissipation TA = 25 °C PD 0.3 TA= 70 °C 0.2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A W °C THER
