PZP003BYB - N-Channel MOSFET
PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6Ω @VGS = 4V ID 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 100 °C ID IDM 110 70 400 Avalanche Current IAS 300 Avalanche Energy L = 0.1mH EAS 0.5 Power Dissipation TA = 25 °C TA = 100 °C PD 150 60 Operating Junction & Storage Te
