PZP103BYB Datasheet - UNIKC

PZP103BYB N-Channel MOSFET

PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.3A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.3 0.2 3 Avalanche Current IAS 1.2 Avalanche Energy L = 1mH EAS 0.8 Power Dissipation TA = 25 °C TA = 70 °C PD 0.5 0.3 Operating Junction & Storage Temperatu.

PZP103BYB Datasheet (392.39 KB)