1N60P - 600V N-CHANNEL POWER MOSFET
The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic.
This power MOSFET is usually used at high speed switching applications of power supplies, PWM
1N60P Features
* RDS(ON) =11.5Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET
* ORDER
