1N60P Datasheet - UTC

600V N-CHANNEL POWER MOSFET

1N60P Features

* RDS(ON) =11.5Ω@VGS = 10V.

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET

* ORDER

1N60P General Description

The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM.

1N60P Datasheet (265.94 KB)

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Datasheet Details

Part number:

1N60P

Manufacturer:

UTC

File Size:

265.94 KB

Description:

600v n-channel power mosfet.

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1N60P 600V N-CHANNEL POWER MOSFET UTC

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1N60P Features

1N60P General Description

Datasheet Details

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