Part number:
2SB834
Manufacturer:
UTC
File Size:
178.41 KB
Description:
High voltage transistor.
2SB834
UTC
178.41 KB
High voltage transistor.
📁 Related Datasheet
2SB831 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB831
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SD1101
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Coll.
2SB831 - Silicon PNP Epitaxial Transistor
(Renesas)
2SB831
Silicon PNP Epitaxial
REJ03G0653-0200 (Previous ADE-208-1033) Rev.2.00 Aug.10.2005
Application
• Low frequency amplifier • Complementary pair .
2SB831 - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial 2SB831
Transistors IC
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
+0.1 1.3-0.1
Low frequency .
2SB831 - Transistor
(TY Semiconductor)
Product specification
2SB831
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
+0.1 1.3-0.1
Low frequency amplifier.
1
+0.1 0.95-.
2SB833 - SILICON PNP TRANSISTOR
(Toshiba)
2SB833
SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . High Collector Current : Ic=-30A . High D.
2SB834 - Silicon PNP Transistor
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB834
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES
C.3 MAX.
Unit in mm
3.6±C
• Low Co.
2SB834 - Silicon PNP Power Transistors
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB834
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo.
2SB834 - PNP Silicon Epitaxial Power Transistor
(Weitron Technology)
.DataSheet.co.kr
2SB834
PNP Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat.
