2SB833 Datasheet, Transistor, Toshiba

2SB833 Features

• Transistor . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm

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2SB833

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Toshiba ↗

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📄 Datasheet

Description:

Silicon pnp transistor.

2SB833 Application

• Applications FEATURES . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Constru

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2SB833

Toshiba

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