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2SB833 Datasheet - Toshiba

2SB833 SILICON PNP TRANSISTOR

2SB833 Features

* . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co

2SB833-Toshiba.pdf

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Datasheet Details

Part number:

2SB833

Manufacturer:

Toshiba ↗

File Size:

108.36 KB

Description:

Silicon pnp transistor.

2SB833 Distributor

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TAGS

2SB833 2SB833 SILICON PNP TRANSISTOR Toshiba