Datasheet4U Logo Datasheet4U.com

2SB833 - SILICON PNP TRANSISTOR

2SB833 Description

2SB833 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS..

2SB833 Features

* . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min. ) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co

📥 Download Datasheet

Preview of 2SB833 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SB831 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB834I - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SB800 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB804 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB805 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB806 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB808 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB810 - PNP SILICON TRANSISTOR (NEC)

📌 All Tags

SILICON PNP TRANSISTOR Toshiba
Toshiba 2SB833-like datasheet