2SB834 Datasheet, Transistor, Toshiba

2SB834 Features

• Transistor C.3 MAX. Unit in mm 3.6±C
• Low Collector Saturation Voltage
• ' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Compl

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Part number:

2SB834

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Toshiba ↗

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📄 Datasheet

Description:

Silicon pnp transistor.

2SB834 Application

• Applications FEATURES C.3 MAX. Unit in mm 3.6±C
• Low Collector Saturation Voltage
• ' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3

TAGS

2SB834

Toshiba

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