2SB834 Datasheet - Toshiba

2SB834 Silicon PNP Transistor

2SB834 Features

* C.3 MAX. Unit in mm 3.6±C

* Low Collector Saturation Voltage

* ' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -6

2SB834-Toshiba.pdf

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Datasheet Details

Part number:

2SB834

Manufacturer:

Toshiba ↗

File Size:

93.49 KB

Description:

Silicon pnp transistor.

2SB834 Distributor

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2SB834 2SB834 Silicon PNP Transistor Toshiba