2SB834 Silicon PNP Transistor

Toshiba

Description

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2SB834
Manufacturer: Toshiba ↗
File Size: 93.49 KB
Datasheet: 2SB834-Toshiba.pdf
Description: Silicon PNP Transistor

Features

* C.3 MAX. Unit in mm 3.6±C
* Low Collector Saturation Voltage
* ' Vce (sat) =-1-07 (Max. ) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -6

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2SB834 Silicon PNP Transistor Toshiba

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