F30NM60 - N-CHANNEL MOSFET

UTC

F30NM60 Datasheet Preview — Preview of F30NM60 PDF

Datasheet Details

Part number	F30NM60
Manufacturer	UTC
File Size	278.97 KB
Description	N-CHANNEL MOSFET
Datasheet	F30NM60-UTC.pdf

F30NM60 Product details

Description

The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Features

S.
RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A.
Fast body diode MOSFET technology.
High Switching Speed.
100% Avalanche Tested.
SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 7 QW-R205-754.E F30NM60 Power MOSFET.

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