F30NM65 Datasheet, Mosfet, UTC

F30NM65 Features

• Mosfet
• RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A
• Fast body diode MOSFET technology
• Low switching losses due to reduced Qrr
• Single Pulse Avalanche Energy Rated

PDF File Details

Part number:

F30NM65

Manufacturer:

UTC

File Size:

719.11kb

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📄 Datasheet

Description:

650v n-channel mosfet. The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed

F30NM65 Application

• Applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-2

TAGS

F30NM65

UTC

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