MJE13003 - NPN SILICON POWER TRANSISTOR

Datasheet Details

Part number	MJE13003
Manufacturer	UTC
File Size	332.77 KB
Description	NPN SILICON POWER TRANSISTOR
Datasheet	MJE13003_UTC.pdf

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

S.
Reverse biased SOA with inductive load @ TC=100°C.
Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.
700V blocking capability.

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Published: Jan 1, 2014 |