UF640

N-CHANNEL POWER MOSFET

UTC

UF640 Features

* RDS(ON) < 0.18Ω @ VGS=10V, ID=10A

* Ultra Low gate charge (typical 43nC)

* Low reverse transfer capacitance (CRSS = typical 100 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET www.unisonic

UF640 General Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies.

UF640 Datasheet (274.17 KB)

UF640 Datasheet Preview — Preview of UF640 PDF

Datasheet Details

Part number:

UF640

Manufacturer:

UTC

File Size:

274.17 KB

Description:

N-channel power mosfet.

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UF640 N-CHANNEL POWER MOSFET UTC

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UF640 Features

UF640 General Description

Datasheet Details

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Description:

UF640 Distributor