UF640-P - N-CHANNEL POWER MOSFET

Unisonic Technologies

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Datasheet Details

Part number	UF640-P
Manufacturer	Unisonic Technologies
File Size	221.08 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UF640-P-UnisonicTechnologies.pdf

UF640-P Product details

Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

Features

S.
RDS(ON) =0.18Ω@ VGS=10V, ID=10A.
Ultra Low gate charge (typical 43nC).
Low reverse transfer capacitance (CRSS = typical 100 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 1 Power MOSFET TO-220.

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Published: Feb 19, 2016 |