UF640-P N-CHANNEL POWER MOSFET

Unisonic Technologies

Description

UNISONIC TECHNOLOGIES CO., LTD UF640-P 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET * .
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear T.

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Datasheet Specifications

Part number: UF640-P
Manufacturer: Unisonic Technologies
File Size: 221.08 KB
Datasheet: UF640-P-UnisonicTechnologies.pdf
Description: N-CHANNEL POWER MOSFET

Features

* RDS(ON) =0.18Ω@ VGS=10V, ID=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* SYMBOL 1 Power MOSFET TO-220

Applications

* The UF640-P suitable for resonant and PWM converter topologies.

UF640-P Distributors

📁 Related Datasheet

UF640 UF60-005 UF60-01 UF60-02 UF60-04 UF60-06

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UF640-P N-CHANNEL POWER MOSFET Unisonic Technologies

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